In situ conductance measurement of surface phases on silicon by the four-probe method

Authors
Belous, IA Utas, OV Tsukanov, DA Lifshits, VG
Citation
Ia. Belous et al., In situ conductance measurement of surface phases on silicon by the four-probe method, INSTR EXP R, 44(5), 2001, pp. 698-699
Citations number
5
Categorie Soggetti
Instrumentation & Measurement
Journal title
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
ISSN journal
00204412 → ACNP
Volume
44
Issue
5
Year of publication
2001
Pages
698 - 699
Database
ISI
SICI code
0020-4412(200109/10)44:5<698:ISCMOS>2.0.ZU;2-5
Abstract
The experimental chamber, automation system, and method for measuring the c onductance of surface phases on silicon are described. This chamber is inte nded for measuring the conductance of superthin films and surface phases on single-crystal silicon substrates by the four-probe method under ultrahigh vacuum conditions (10(-10) Torr). The system is controlled by a computer a nd contains 12-bit analog-to-digital and digital-to-analog, converters. The measurement error is less than or equal to0.5%. The measurement rate is 10 points/s.