Bias-dependent small-signal monolithic PIN diode modeling

This paper details a new bias-dependant small-signal modeling methodology f or monolithic PIN diodes. The frequency-dependent responses of intrinsic p- i-n structures are de-embedded from monolithic microwave integrated circuit PIN diodes of varying size and layout configuration and fit from 6 to 45 G Hz to a classical linear model at each of 15 different bias levels. This me thodology results in a bias-dependent intrinsic diode data set that shows e xcellent agreement with large samples of small-signal measurements. The mod els are useful for comparing trade-offs in electrical performance among PIN diodes of varying size and layout style. (C) 2001 John Wiley & Sons, Inc.