The title compound, Gd2MgGe2, crystallizes in a ternary variant of the tetr
agonal U3Si2 structure type with unit cell parameters of a=7.291(1) and c=4
.2826(8) Angstrom, space group P4/mbm, Z=2. Temperature (4.3-300 K) and mag
netic field (0-50 kOe) dependencies of the dc magnetization, along with tem
perature dependence of the ac magnetic susceptibility (25 Oe, 125 Hz) of Gd
2MgGe2 are presented. The behavior of both the dc magnetization and ac magn
etic susceptibility above ca. 150 K indicates a disordered magnetic state f
or Gd atoms while below ca. 150 K, it shows the existence of antiferromagne
tic order. Tight-binding electronic structure (TB-LMTO-ASA) calculations in
cluding spin-polarization are utilized to discuss the chemical bonding and
provide insights for the magnetic ordering process in this compound. (C) 20
01 Elsevier Science B.V. All rights reserved.