Dl. Xia et al., Fabrication and electrical properties of lead zirconate titanate thick films using a new sol-gel processing technique, J MAT S-M E, 12(10), 2001, pp. 587-590
Lead zirconate titanate (Pb (Zr0.53Ti0.47) O-3, PZT) ferroelectric films 2-
60 mum in thickness have been successfully fabricated on Pt-coated oxidized
Si substrates (Pt/Ti/SiO2/Si) by a new sol-gel-based process. The films ar
e a 0-3 ceramic-ceramic composite formed by dispersing ceramic powders in a
sol-gel solution. The precursor solution for spin coating was prepared fro
m lead acetate, tetrabutyl titanate, and zirconium nitrate. The microstruct
ure and morphology of the prepared PZT thick films were investigated via X-
ray diffractometry (XRD) and scanning electron microscopy techniques. XRD a
nalysis shows that the thick films possess single-phase perovskite-type str
ucture, no pyrochlore phase exists in thick films, and SEM micrographs sugg
est that the PZT thick films were uniform, dense, and crack free. A dielect
ric constant of 860, loss tangent of 0.03, remanent polarization of 25 mu C
cm(-2), and a coercive field of 40 kV cm(-1) were measured on 50 mum thick
films. (C) 2001 Kluwer Academic Publishers.