Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP

InGaAs/AlAsSb quantum well structures have been grown by molecular beam epi taxy nominally lattice matched to InP substrates and characterized by photo luminescence. The exciton transitions from the n=1 electron to heavy-hole s ubbands were investigated and the band-edge discontinuity of an InGaAs/AlAs Sb heterostructure was evaluated using an envelope function method. The typ e I band lineup with a band-edge discontinuity was estimated to be about 1. 6 eV for As terminated samples, which exhibit the lowest compositional fluc tuations across heterointerfaces. The dominant photoluminescence line-broad ening mechanisms were found to be monolayer fluctuations in the well width and a random alloy compositional variation in sublayers, as well as exciton -optical phonon scattering. Using an optimized growth condition, short inte rsubband transitions in the 1.3-1.5 mum wavelength range were measured in t he coupled double quantum well structures. (C) 2001 American Vacuum Society .