Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films

The bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposi tion (LPCVD) undoped silicate glass and phospho-silicate glass (PSG) proces ses were investigated to study film composition, etch rate, and step covera ge. Through the addition of phosphorous doping, LPCVD PSG processing offers an attractive low temperature option. Enhanced deposition rate for the PSG process enables the lowering of the deposition temperature to the 400-500 degreesC range, thereby minimizing the thermal cycle and offering compatibi lity with many back-end-of-line processes. Many properties of these films a re similar to those of the tetraethoxysilane (TEOS)-based LPCVD oxide. Diff erences in the film properties compared with the TEOS-based LPCVD oxide fil ms can be traced to the composition of these films and the reaction mechani sm. (C) 2001 American Vacuum Society.