Atomic models of (root 3X root 3)R30 degrees reconstruction on hexagonal 6H-SiC(0001) surface

Authors
Han, Y Aoyama, T Ichimiya, A Hisada, Y Mukainakano, S
Citation
Y. Han et al., Atomic models of (root 3X root 3)R30 degrees reconstruction on hexagonal 6H-SiC(0001) surface, J VAC SCI B, 19(5), 2001, pp. 1972-1975
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
5
Year of publication
2001
Pages
1972 - 1975
Database
ISI
SICI code
1071-1023(200109/10)19:5<1972:AMO(3R>2.0.ZU;2-6
Abstract
By using reflection high-energy electron diffraction (RHEED) and RHEED mult islice dynamical calculations, the atomic structures of the (root3 x root3) R30 degrees reconstruction on 6H-SiC(0001) surface were solved. Both the si mple adatom structure with a Si coverage of one-third monolayer occupying t he threefold-symmetric T-4 or H-3 sites and a bit complex structure with Si trimers centered on the T-4 positions with 1 monolayer coverage are all co mpatible with our results. (C) 2001 American Vacuum Society.