Synthesis and properties of boron carbon nitride (BN : C) films by pulsed-DC magnetron sputtering

The ion-assisted, high-rate, reactive and pulsed-DC magnetron sputtering te chnique was used to deposit boron carbon nitride (BN:C) films by sputtering a boron carbide (B4C) target in argon and nitrogen plasma. Various process ing parameters were explored to grow BN:C films with high cubic boron nitri de (c-BN) content. FTIR, SEM, TEM, AES, and Raman spectroscopy were used to characterize the phases, composition and surface morphology of the films. Significant influence of substrate bias voltage and temperature on phase co mposition of the films was found. The deposited BN:C films exhibit h-BN, wu rtzite-BN (w-BN), c-BN phases and their mixed phases with the variation in substrate bias and temperature. A multi-stage deposition technique with var iable substrate bias was exploited to obtain 90% c-BN film with clear grain s and facets. (C) 2001 Elsevier Science B.V. All rights reserved.