Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering

Zinc oxide is an important fluorescence material due to its excellent lumin escence efficiency and low voltage required to produce green light. In this study, the RF reactive magnetron sputtering system was used to deposit the transparent (ZnO:Zn) thin films on glass substrates. The effect of RF sput tering power and heat treatment on the photoluminescence (PL) and resistivi ty were studied. It has been found that increasing RF sputtering power impr oves the PL efficiency. After heat treatment in argon atmosphere, the cryst alline structure of the ZnO film is improved and the (0 0 0 2) preferred or ientation is enhanced. The resistivity of the as-deposited film cannot be d etected. After annealing, the resistivity is in the range 10(-1)-10(-3) Ome ga cm(-1). (C) 2001 Elsevier Science B.V All rights reserved.