Resistive heated MOCVD deposition of InN films

Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) subs trate using a simple resistive heated metalorganic chemical vapor depositio n (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within VC. Structural studies and optical prop erty measurement by scanning electron microscope (SEM), X-ray diffraction ( XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temper ature (540 degreesC). The room temperature photoluminescence spectrum of th e InN film showed a strong peak at 1.8 eV. Further high resolution transmis sion electron microscopy (HRTEM) investigation revealed some inclusion of n anocrystalline phase, which might be responsible for the strong photolumine scence signal. (C) 2001 Elsevier Science B.V. All rights reserved.