Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition

Thin aluminum oxide (Al2O3) films were grown by plasma-assisted atomic laye r controlled deposition (PAALD) method using Dimethylethylamine alane ((CH3 )(2) (C2H5)N:AlH3) (DMEAA). Al was deposited by PAALD method, then the Al f ilms were oxidized into Al2O3 by the plasma oxidation in the same chamber w ithout breaking the vacuum. Al2O3 thin films of 15 mn thickness were prepar ed by repetition of the above mentioned process. Thus, prepared Al2O3 thin films showed a refractive index of 1.68. The thickness and the refractive i ndex fluctuation of the film over a 4-in. wafer were +/-2.3% and +/-1.9%, r espectively, for atomic layer controlled deposited films. The leakage curre nt density and breakdown field were measured to be about 10(-8) A/cm(2) at 1 and 7 MV/cm, respectively. (C) 2001 Published by Elsevier Science B.V.