Amorphous molecular materials: development of novel negative electron-beammolecular resists

Novel molecular resist materials, 1,3,5-tris[2-(4-vinylphenylcarbonyloxy)ph enyl]benzene (o-VCTPB), 1,3,5-tris[3-(4-vinylphenylcarbonyloxy)phenyl]benze ne (m-VCTPB), and 1,3,5-tris[4-(4-vinylphenylcarbonyloxy)phenyl]benzene (p- VCTPB), were designed and synthesized. They function as negative electron-b eam resists, becoming insoluble in developer upon electron-beam exposure. T he sensitivity of o-, m-, and p-VCTPB upon exposure to a 20-k-eV electron b eam were 15, 46, and 30 muC cm(-2), respectively. These materials permitted the fabrication of line patterns of 100-200 nm upon exposure to a 50-keV e lectron beam. It is shown that molecular resists are promising candidates f or use in the future electron-beam lithography. (C) 2001 Elsevier Science B .V. All rights reserved.