Partial dislocations in the X-ray topography of as-grown hexagonal siliconcarbide crystals

Citation
Wm. Vetter et M. Dudley, Partial dislocations in the X-ray topography of as-grown hexagonal siliconcarbide crystals, MAT SCI E B, 87(2), 2001, pp. 173-177
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
87
Issue
2
Year of publication
2001
Pages
173 - 177
Database
ISI
SICI code
0921-5107(20011115)87:2<173:PDITXT>2.0.ZU;2-8
Abstract
Dislocations visible in X-ray topographs of as-grown hexagonal silicon carb ide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3<11 (2)over bar0 >. Under the electro n microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3 < 10 (1) over bar0 > Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a b = 1/3 < 11 (2) over bar0 > dislocation in a Lely platelet vi sibly separated into its partials in an X-ray topograph was presented. (C) 2001 Elsevier Science B.V. All rights reserved.