Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs: A five-band study

Authors
Zhang, Y Wang, XQ Chen, WY Bai, XD Liu, CX Yang, SR Liu, SY
Citation
Y. Zhang et al., Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs: A five-band study, OPT QUANT E, 33(11), 2001, pp. 1131-1137
Citations number
14
Categorie Soggetti
Optics & Acoustics
Journal title
OPTICAL AND QUANTUM ELECTRONICS
ISSN journal
03068919 → ACNP
Volume
33
Issue
11
Year of publication
2001
Pages
1131 - 1137
Database
ISI
SICI code
0306-8919(2001)33:11<1131:AORTPS>2.0.ZU;2-L
Abstract
In this paper, room temperature PL spectra of InAs self-assembled dots grow n on GaAs/InP and InP substrate are presented. For analyzing different posi tions of the PL peaks, we examine the strain tensor in these quantum dots ( QDs) using a valence force field model, and use a five-band k .p formalism to find the electronic spectra. We find that the GaAs tensile-stained layer affects the position of room temperature PL peak. The redshift of PL peak of InAs/GaAs/InP QDs compared to that of InAs/InP QDs is explained theoreti cally.