Optimum parameters to etch Nd : YAG crystals with orthophosphoric acid H3PO4

Authors
Citation
M. Gerber et T. Graf, Optimum parameters to etch Nd : YAG crystals with orthophosphoric acid H3PO4, OPT LASER T, 33(7), 2001, pp. 449-453
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS AND LASER TECHNOLOGY
ISSN journal
00303992 → ACNP
Volume
33
Issue
7
Year of publication
2001
Pages
449 - 453
Database
ISI
SICI code
0030-3992(200110)33:7<449:OPTEN:>2.0.ZU;2-Y
Abstract
Subsurface flaws, which determine the fracture strength of crystals, can be removed by the aid of chemical etching. Above a temperature of 200 degrees C orthophosphoric acid H3PO4 is an efficient etchant for yttrium aluminium garnets. However, at these temperatures the etchant decomposes into its rel ated phosphoric acids which show negligible etching rates for garnets. It t akes a long time to warm up a large volume of acid and the etchant is decom posed for the most part already before the optimum temperature is reached. We show that efficient etching is achieved when the samples are in the bath already during the warm-up phase and specify the parameters for the optimu m etch process. (C) 2001 Elsevier Science Ltd. All rights reserved.