Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

Authors
Yin, JZ Wang, XQ Yin, ZY Li, MT Li, ZT Du, GT Yang, SR
Citation
Jz. Yin et al., Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP, OPT LASER T, 33(7), 2001, pp. 507-509
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS AND LASER TECHNOLOGY
ISSN journal
00303992 → ACNP
Volume
33
Issue
7
Year of publication
2001
Pages
507 - 509
Database
ISI
SICI code
0030-3992(200110)33:7<507:STMOOG>2.0.ZU;2-U
Abstract
We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control lnAs/InP self-assembled quantum dots arrangement. Photolum inescence spectrum, and atomic force microscopy images have been investigat ed. In the experiment, ordered InAs islands have been obtained and the maxi mum density of quantum dots is 1.6 x 10(10) cm(-2) at 4 monolayers InAs lay er. (C) 2001 Elsevier Science Ltd. All rights reserved.