Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates

Authors
Akahane, K Xu, HZ Okada, Y Kawabe, M
Citation
K. Akahane et al., Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates, PHYSICA E, 11(2-3), 2001, pp. 94-98
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
11
Issue
2-3
Year of publication
2001
Pages
94 - 98
Database
ISI
SICI code
1386-9477(200110)11:2-3<94:FOLOIS>2.0.ZU;2-7
Abstract
The in-plane strain relaxation properties on InGaAs/GaAs(3 1 1)B were inves tigated by means of reciprocal space mapping using triple axis X-ray diffra ctometry to study the origin of two-dimensional ordering of InGaAs quantum dots (QDs) on a GaAs(3 1 1)B substrate. From the X-ray data, the strain rel axation anisotropy in the InGaAs laver was observed to be larger on the GaA s(3 1 1)B substrate than on (0 0 1). It is proposed that the large strain a nisotropy is responsible for the QD ordering observed on the (3 1 1)B surfa ce. (C) 2001 Elsevier Science B.V. All rights reserved.