Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces
Citation
T. Ota et al., Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces, PHYSICA E, 11(2-3), 2001, pp. 228-232
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
SICI code
1386-9477(200110)11:2-3<228:MSOS(G>2.0.ZU;2-E
Abstract
Single AlGaAs and GaAs quantum wires (QWRs) have been investigated by micro
-photoluminescence (micro-PL). The micro-PL spectra of the GaAs QWR reveal
that the GaAs QWR consists of a number of sharp peaks with a full-width at
half-maximum (FWHM) of several hundreds mu eV, which is similar to the resu
lts of previous reports. In contrast, micro-PL spectra of the AlGaAs QWR ex
hibit only one peak with a FWHM of similar to 1 meV. indicating homogeneous
QWR. The CL measurements are consistent with the results of the micro-PL m
easurements. The different features of the micro-PL spectra of the GaAs and
AlGaAs QWR come from fluctuations in the thickness of the QWR. Therefore,
the AlGaAs homogeneous QWRs are expected to exhibit intrinsic one-dimension
al properties of the QWR and to clarify various properties of one-dimension
al systems, such as carrier transportation in the QWRs. (C) 2001 Elsevier S
cience B.V. All rights reserved.