Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces

Citation
T. Ota et al., Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces, PHYSICA E, 11(2-3), 2001, pp. 228-232
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
11
Issue
2-3
Year of publication
2001
Pages
228 - 232
Database
ISI
SICI code
1386-9477(200110)11:2-3<228:MSOS(G>2.0.ZU;2-E
Abstract
Single AlGaAs and GaAs quantum wires (QWRs) have been investigated by micro -photoluminescence (micro-PL). The micro-PL spectra of the GaAs QWR reveal that the GaAs QWR consists of a number of sharp peaks with a full-width at half-maximum (FWHM) of several hundreds mu eV, which is similar to the resu lts of previous reports. In contrast, micro-PL spectra of the AlGaAs QWR ex hibit only one peak with a FWHM of similar to 1 meV. indicating homogeneous QWR. The CL measurements are consistent with the results of the micro-PL m easurements. The different features of the micro-PL spectra of the GaAs and AlGaAs QWR come from fluctuations in the thickness of the QWR. Therefore, the AlGaAs homogeneous QWRs are expected to exhibit intrinsic one-dimension al properties of the QWR and to clarify various properties of one-dimension al systems, such as carrier transportation in the QWRs. (C) 2001 Elsevier S cience B.V. All rights reserved.