Phonons in III-V nitrides: Confined phonons and interface phonons

Authors
Dutta, M Alexson, D Bergman, L Nemanich, RJ Dupuis, R Kim, KW Komirenko, S Stroscio, M
Citation
M. Dutta et al., Phonons in III-V nitrides: Confined phonons and interface phonons, PHYSICA E, 11(2-3), 2001, pp. 277-280
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
11
Issue
2-3
Year of publication
2001
Pages
277 - 280
Database
ISI
SICI code
1386-9477(200110)11:2-3<277:PIINCP>2.0.ZU;2-8
Abstract
Phonons in III-V nitrides are examined experimentally for dimensionally con fined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions o f Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measur ements of interface phonons in binary GaN-AlN superlattices are presented. (C) 2001 Elsevier Science B.V. All rights reserved.