The depth profiles of D atoms and D-2 Molecules in W single crystals and ho
t-rolled W implanted with 6 keV D ions at 300 and 650 K were determined by
means of secondary ion mass spectrometry (SIMS) and residual gas analysis (
RGA) measurements in the course of surface sputtering. Retention of deuteri
um and lattice damage in W single crystal irradiated with 10 keV D ions at
300 K were investigated by means of nuclear reaction analysis (NRA) and Rut
herford backscattering spectrometry and ion channelling techniques (RBS/C).
There are at least two types of ion-induced defects which are responsible
for trapping of deuterium: (i) D-2-filled microvoids (deuterium bubbles) lo
calised in the implantation zone and (H) dislocations distributed from the
surface to depths far beyond 1 mum which capture deuterium in the form of D
atoms. Additionally, D atoms can be trapped by vacancies and adsorbed on b
ubble walls. At 650 K, deuterium is retained as D atoms only.