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X-ray diffraction analysis of the gallium-rich surface of GaAs(001) - art.no. 161305

Authors

Paget, D Garreau, Y Sauvage, M Chiaradia, P Pinchaux, R Schmidt, WG

Citation

D. Paget et al., X-ray diffraction analysis of the gallium-rich surface of GaAs(001) - art.no. 161305, PHYS REV B, 6416(16), 2001, pp. 1305

Citations number

Categorie Soggetti

Apllied Physucs/Condensed Matter/Materiales Science

Journal title

PHYSICAL REVIEW B

ISSN journal

01631829 → ACNP

Volume

6416

Issue

Year of publication

2001

Database

ISI

SICI code

0163-1829(20011015)6416:16<1305:XDAOTG>2.0.ZU;2-1

Abstract

We have performed an x-ray diffraction analysis of the gallium-rich reconst ruction of GaAs(001). The results clearly support the zeta (4 x 2) model, w hich was recently proposed by Lee et al. [Phys. Rev. Lett. 85, 3890 (2000)] in order to explain the atomic structure of this surface. We obtain precis e values of the atomic coordinates and we analyze the chemical bonds betwee n the first atomic layer and the underlying layers.