Temperature-dependent self-doping effects on the metal-insulator transition of Tl2Ru2O7 - art. no. 165108

Citation
Js. Lee et al., Temperature-dependent self-doping effects on the metal-insulator transition of Tl2Ru2O7 - art. no. 165108, PHYS REV B, 6416(16), 2001, pp. 5108
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6416
Issue
16
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011015)6416:16<5108:TSEOTM>2.0.ZU;2-#
Abstract
We investigated temperature (T-) dependent optical conductivity spectra for Tl2Ru2O7, which shows a metal-insulator (MI) transition at T(MI)similar to 125 K. It was found that there is a strong mid-infrared peak and that its T-dependent spectral weight changes are quite significant. In particular, i ts T dependences are similar to the doping dependences of the mid-infrared peak in an externally doped Mott insulator. These intriguing phenomena can be explained by self-doping for the Ru 4d states in the presence of an easi ly polarizable Tl cation. Moreover, the T-dependent amount of self-doping i s found to be closely related to the MI transition.