Influence of p-n junction formation at a Si/Si : Er interface on low-temperature excitation of Er3+ ions in crystalline silicon - art. no. 132202

The characteristic lambda = 1.54 mum emission of Er3+ ions implanted into a silicon wafer is excited by an Ar laser pointed at the nonimplanted side o f the sample. In this experimental configuration energy has to be transferr ed across the bulk of the crystal, of approximately 350 mum thickness, befo re reaching the Er-doped layer. Effects related to the presence of a p-n ju nction formed by Er doping at the Si/Si:Er interface are consistently expla ined assuming that excitons are responsible for 4f-electron core excitation of the Er3+ ions in crystalline silicon at low temperatures.