Annealing effect on current perpendicular to plane systems modeled by giant magnetoresistance simulation - art. no. 134427

A simulation single-electron model is presented to describe the effect of a nnealing current perpendicular to plane-giant magnetoresistance (CPP-GMR) s ystems. Progressive annealing is represented by a progressively increasing number of impurities occurring at the interfaces of adjacent layers constit uting the GMR system. A feature is introduced to the FM impurities to facil itate a decrease in MR as a function of the interface-impurity density.