Direct determination of track etch rate and response of CR-39 to normal incidence high-energy heavy ions

Response of CR-39 to high-energy heavy ions was investigated by using optic al microphotographs of track profiles for Ar (480 MeV/n) and Ni (300 MeV/n) . The depth dependence of track etch rate (V-r) was determined experimental ly by track length measurement. The results indicate that V-r for the low R EL Ar tracks is depth independent but for the high REL Ni tracks V-r is gra dually decreasing with depth. The region beyond 30 mum depth inside the det ector shows a stable region regarding the detector response for both ions. (C) 2001 Published by Elsevier Science Ltd.