Nano-scratch study of molecular deposition (MD) films on silicon wafer using nanoindentation

Citation
Dg. Wang et al., Nano-scratch study of molecular deposition (MD) films on silicon wafer using nanoindentation, SCI CHINA A, 44, 2001, pp. 326-329
Citations number
7
Categorie Soggetti
Multidisciplinary
Journal title
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
ISSN journal
10016511 → ACNP
Volume
44
Year of publication
2001
Supplement
S
Pages
326 - 329
Database
ISI
SICI code
1001-6511(200108)44:<326:NSOMD
Abstract
Experiment of the molecular deposition (MID) films with and without alkyl t erminal deposited on the silicon wafer were conducted by using nanoindentat ion. It was found that MID films and alkyl terminated MID films exhibit hig her critical load (scratch resistance or adhesive strength) and lower coeff icient of friction compared with the silicon substrate. Critical load (scra tch resistance) increases with the number of layers, and coefficients of fr iction of those MID film with alkyl terminal are still best for the same la yer of MD film.