Synthesis of amorphous carbon nitride by ion implantation

N-2(+) were implanted into diamondlike carbon (DLC) films in an attempt to synthesize amorphous carbon nitride. The DLC films were previously deposite d on steel substrate by using an ion beam sputtering deposition (IBSD) wher e a single Kaufman type ion gun with argon source was used to sputter a gra phite target and simultaneously bombard the growing film. Parallel to the i on implantation route, amorphous carbon nitride films were also synthesized by directly using the reactive ion beam sputtering deposition (RIBSD) with nitrogen source to incorporate nitrogen into the film. The structure and p roperties of the films were determined by using Raman spectroscopy, XPS and nano-indentation. The implantation of N-2(+) into a-C films offers a highe r hardness than that directly synthesized by RIBSD, probably through an inc rease in sp(3)/sp(2) ratio and in the proportion of nitrogen atoms chemical ly bonding to carbon atoms. The results show that although there are differ ences in film composition, structure and properties between these two proce sses, both methods can be used for synthesis of nitrogen-containing amorpho us DLC thin films which significantly modify the substrate surface.