Role of parasitics in humidity sensing by porous silicon

Citation
J. Das et al., Role of parasitics in humidity sensing by porous silicon, SENS ACTU-A, 94(1-2), 2001, pp. 44-52
Citations number
21
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
94
Issue
1-2
Year of publication
2001
Pages
44 - 52
Database
ISI
SICI code
0924-4247(20011031)94:1-2<44:ROPIHS>2.0.ZU;2-Z
Abstract
Humidity sensing by porous silicon (PS) layer is commonly reported either b y capacitive sensing or by conductive sensing. A critical analysis of both capacitive and conductive sensing by microporous PS layer is presented here . The influences of parasitic capacitances and resistances unavoidably asso ciated with the active porous layer on the measured changes in capacitance and resistance of the humidity sensor with variation of humidity are analys ed. The role of contact geometry, signal frequency and porosity of PS layer are also discussed. It is shown that capacitive sensing is more sensitive in low frequency range owing to the relative contributions of parasitic com ponents. (C) 2001 Elsevier Science B.V. All rights reserved.