This work reports on integrated highly sensitive InAs/GaSb 3D position sens
ors for the detection of tire tread deformation. The use of the InAs/GaSb h
eterostructures provides higher electron mobilities (26,000 cm(2)/V); this
results in increased voltage related Hall sensitivities (0.6 T-1) for 5 V b
ias voltage. Reduced power consumption of such sensors makes them attractiv
e for their implementation within battery-operated measurement systems. (C)
2001 Elsevier Science B.V. All rights reserved.