Ion-selective light-addressable potentiometric sensor (LAPS) with chalcogenide thin film prepared by pulsed laser deposition

Authors
Mourzina, Y Yoshinobu, T Schubert, J Luth, H Iwasaki, H Schoning, MJ
Citation
Y. Mourzina et al., Ion-selective light-addressable potentiometric sensor (LAPS) with chalcogenide thin film prepared by pulsed laser deposition, SENS ACTU-B, 80(2), 2001, pp. 136-140
Citations number
23
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
80
Issue
2
Year of publication
2001
Pages
136 - 140
Database
ISI
SICI code
0925-4005(20011120)80:2<136:ILPS(W>2.0.ZU;2-#
Abstract
Pb-Ag-As-I-S chalcogenide glass was deposited on the surface of a light-add ressable potentiometric sensor (LAPS) by means of the pulsed laser beam dep osition (PLD) technique. The deposited layer worked as a Pb2+-ion-sensitive transducer, and the sensor showed Nernstian response with a sensitivity of 29 +/-1 mV/decade. The detection limit of the sensor for Pb2+-ions was 1 x 10(-6) mol/l. The response time does not exceed 50 s for Pb2+-ion concentr ations higher than 1 x 10(-3) mol/l, while for lower concentration range th e response time increases up to 3-5 min. (C) 2001 Elsevier Science B.V. All rights reserved.