Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx

Authors
Pic, N Glachant, A Nitsche, S Hoarau, JY Goguenheim, D Vuillaume, D Sibai, A Chaneliere, C
Citation
N. Pic et al., Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx, SOL ST ELEC, 45(8), 2001, pp. 1265-1270
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
8
Year of publication
2001
Pages
1265 - 1270
Database
ISI
SICI code
0038-1101(200108)45:8<1265:DOTEPO>2.0.ZU;2-X
Abstract
The aim of this work is to obtain the electrical properties of a leaky 2 nm ultrathin thermally grown nitride film using the classical high frequency capacitance (C(V)) measurements, The substrate Si(100) surface cleaned in u ltrahigh vacuum is nitrided in a low pressure (1 x 10(-4) mbar) of nitric o xide (NO) gas at 1050 degreesC. This film is characterised by Auger electro n spectroscopy, Fourier transform infrared spectroscopy, transmission elect ron microscopy and reflection electron energy loss spectroscopy. The deposi tion of a self-assembled insulating monolayer of organic molecules (octadec yltrichlorosilane) on the nitride gives rise to a metal insulator semicondu ctor structure which permits to obtain the electrical properties of the ult rathin nitride film. (C) 2001 Elsevier Science Ltd. All rights reserved.