Photoelectron diffraction study of the Si2p surface-core-level-shift of the Si(001)(1 x 2)-Sb surface

Authors
Shimomura, M Abukawa, T Yoshimura, K Oh, JH Yeom, HW Kono, S
Citation
M. Shimomura et al., Photoelectron diffraction study of the Si2p surface-core-level-shift of the Si(001)(1 x 2)-Sb surface, SURF SCI, 493(1-3), 2001, pp. 23-28
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
493
Issue
1-3
Year of publication
2001
Pages
23 - 28
Database
ISI
SICI code
0039-6028(20011101)493:1-3<23:PDSOTS>2.0.ZU;2-U
Abstract
Structural parameters of the Si(001)(1 x 2)-Sb surface were optimized by ph otoelectron diffraction (PED) of Sb 4d peaks. The optimized parameters are 3.17 +/- 0.1 Angstrom for Sb-dimer bond length and 1.78 +/- 0.1 Angstrom fo r the layer spacing between Sb and the first layer Si. The main origin of a surface-core-level-shifted (SCLS) component in Si 2p core-level spectra is identified by SCLS-PED to be the first layer Si atoms connected to Sb dime rs. Another SCLS component reported previously was not observed, which indi cates that this SCLS component is related to some defects on the (1 x 2)-Sb surface. (C) 2001 Elsevier Science B.V. All rights reserved.