Study of the reaction at Cu/3C-SiC interface

We have investigated solid state reaction at Cu/3C-SiC(001) interface in an annealing temperature range between 250 degreesC and 950 degreesC, using s oft X-ray emission spectroscopy (SXES) and X-ray diffractometry (XRD). The interface reaction between Cu and 3C-SiC has not occurred for the Cu(180 nm )/3C-SiC specimens annealed at less than or equal to 750 degreesC, and the formation of Cu-silicide is found from SXES analysis for Cu(180 nm)/3C-SiC specimens annealed at 850 degreesC and 950 degreesC. It is clarified that t he reaction resultant is easy to be oxidized due to the presence of oxygen. The reaction products for the specimens are inferred to be a Cu-silicide, possibly Cu3Si, by comparing measured Si KP spectra with synthesized Si KP spectra of SiO2 with that of a Cu-silicide. possibly Cu3Si, which is prepar ed by solid phase reaction of a Cu(120 nm)/Si(111) specimen and analyzed by XRD. (C) 2001 Elsevier Science B.V. All rights reserved.