Surface structures of 6H-SiC(0 0 0 1)root3 x root 3R30 degrees and 3 x 3 re
constructions have been studied by rocking curves of reflection high energy
electron diffraction (RHEED) intensities in one-beam condition. The root3
x root 3R30 degrees reconstruction is observed by annealing the Si pre-depo
sited specimen in the Si flux at 1030 degreesC for 5 min. The 3 x 3 reconst
ructions is observed by annealing the Si pre-deposited specimen in the Si f
lux at 1000 degreesC for 5 min and by successive annealing of the root3 x r
oot3 surface in the Si flux at 940 degreesC for 5 min. Normal components of
atomic positions and layer densities are determined by analysis with RHEED
dynamical calculations for the root3 x root3. For the 3 x 3 surfaces, we d
etermined surface normal components of atomic positions for three possible
structure models. (C) 2001 Elsevier Science B.V. All rights reserved.