To measure electrical conductivity of materials in scales ranging from nano
meter to millimeter, a four-point probe system was developed and installed
in an ultrahigh-vacuum. scanning electron microscope (UHV-SEM). Each probe,
made of a W tip, was independently driven with piezoelectric actuators and
a scanner in XYZ directions to achieve precise positioning in nanometer sc
ales. The SEM was used for observing the tips for positioning, as well as t
he sample surface together with scanning reflection-high-energy electron di
ffraction capability. This four-point probe system has two kinds of special
devices. One is octapole tube-type scanners for tip scanning parallel to t
he sample surface with negligible displacements normal to the surface. Anot
her is a pre-amplifier which can be switched in current measurement mode be
tween tunnel contact for scanning tunneling microscopy and direct contact f
or four-point probe method. The electrical resistance of a silicon crystal
with a Si(1 1 1)-7 x 7 clean surface was measured with this machine as a fu
nction of probe spacing between I mm and I un. The result clearly showed an
enhancement of surface sensitivity in resistance measurement by reducing t
he probe spacing. (C) 2001 Elsevier Science B.V. All rights reserved.