GaAsN-on-GaAs MBE using a DC plasma source

Authors
Zhukov, AE Semenova, ES Ustinov, VM Weber, ER
Citation
Ae. Zhukov et al., GaAsN-on-GaAs MBE using a DC plasma source, TECH PHYS, 46(10), 2001, pp. 1265-1269
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
46
Issue
10
Year of publication
2001
Pages
1265 - 1269
Database
ISI
SICI code
1063-7842(200110)46:10<1265:GMUADP>2.0.ZU;2-H
Abstract
A new dc plasma source for MBE growth of GaAsN layers is suggested. The eff iciency of nitrogen incorporation, crystal perfection, surface. morphology, and luminescent properties of the epilayers vs. operation conditions of th e source are studied. (C) 2001 MAIK "Nauka/Interperiodica".