Growth of highly oriented of Pb(Zr-x, Ti1-x)O-3 film on porous silicon

Thin Pb(Zr0.52Ti0.48)O-3 (PZT) films on porous silicon (PS) substrates were fabricated by a pulsed laser ablation (PLA) technique. X-Ray diffraction s tudies show the presence of c-axis orientation only. The full width at half maximum (FWHM) of the rocking curve of the diffraction at 20 44.22 degrees (002) is less than 0.7 degrees, showing high (001)-orientation. The film i s ferroelectric and exhibits a symmetric hysteresis loop. The remnant polar ization and the coercive field were 4.2 muc/cm(2) and 38 kV/cm, respectivel y. The results indicate that using PS as a substrate could solve well the p roblems not only of the growth of oriented PZT film, but also of preventing diffusion between a ferroelectric and Si substrate during device fabricati on without any intermediate layer. (C) 2001 Elsevier Science B.V. All right s reserved.