Chemical vapor deposition of copper film from hexafluoroacetylacetonateCu((I))vinylcyclohexane

An organometallic precursor, (hexafluoroacetyl-acetonate, hfac)Cu-(1)(vinyl cyclohexane, VCH) was studied for metallorganic chemical vapor deposition o f copper thin films. The vapor pressure of (hfac)Cu-(1)(VCH) is approximate ly 0.1 torr at 40 degreesC and no appreciable amount of precipitation was o bserved while holding at 65 degreesC for 1 month. The resistivity, purity, texture, adhesion, conformality and surface morphology of the film were inv estigated. The (hfac)Cu-(1)(VCH) allowed the deposition at temperatures as low as 75 degreesC. Copper film had a low resistivity of approximately 2.0 mu Omega . cm for deposition temperatures ranging from 125 to 175 degreesC. The copper film on physical vapor deposition (PVD) TiN was continuous and smoother than on chemical vapor deposition (CVD) TiN. The concentration lev el of impurities, including C, F and O at the interface was lower on PVD Ti N than on CVD TiN. Films deposited at higher temperature showed better adhe sion. It is believed that (hfac)Cu-(1)(VCH) is stable with low vapor pressu re and suitable as a precursor for seed layer formation with conformal cove rage. (C) 2001 Elsevier Science B.V. All rights reserved.