A model of abrasive-free removal of copper films using an aqueous hydrogenperoxide-glycine solution

Using a recently formulated cell model for mass transport with chemical rea ction in chemical-mechanical polishing, predictions are made for the rates of chemical removal of copper from blanket films in a hydrogen peroxide sol ution containing glycine, and compared with experimental observations. The model requires input regarding the kinetics of the reaction, geometrical pa rameters, and the relative velocity between the wafer and the pad. Predicti ons of the removal rate as a function of the relative velocity between the wafer and the pad at three different glycine concentrations are found to be consistent with the trend displayed by experimentally measured results fro m a chemical-mechanical polishing tool. (C) 2001 Elsevier Science B.V. All rights reserved.