Growth of epitaxial anatase (001) and (101) films

Authors
Citation
Gs. Herman et Y. Gao, Growth of epitaxial anatase (001) and (101) films, THIN SOL FI, 397(1-2), 2001, pp. 157-161
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
397
Issue
1-2
Year of publication
2001
Pages
157 - 161
Database
ISI
SICI code
0040-6090(20011001)397:1-2<157:GOEA(A>2.0.ZU;2-U
Abstract
Anatase (TiO2) films have been grown by oxygen plasma assisted molecular be am epitaxy. Reflection high-energy electron diffraction and low energy elec tron diffraction indicate that the films grow epitaxially with respect to t he substrate. For (001) anatase films grown on SrTiO3 (001) we have found t hat a (1 X 4) reconstruction is formed under growth conditions. On cooling to room temperature this reconstruction remains. The (101) anatase films we re grown on a natural anatase (101) substrate. The natural substrate (i.e., mineral) was used due to the difficulty in obtaining good lattice matched materials for this surface orientation. X-Ray photoelectron spectroscopy re sults indicate that both surfaces are fully oxidized with Ti in the 4+ oxid ation state. (C) 2001 Elsevier Science BN. All rights reserved.