Effect of LiF buffer layer on the performance of organic electroluminescent devices

Citation
Y. Zhao et al., Effect of LiF buffer layer on the performance of organic electroluminescent devices, THIN SOL FI, 397(1-2), 2001, pp. 208-210
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
397
Issue
1-2
Year of publication
2001
Pages
208 - 210
Database
ISI
SICI code
0040-6090(20011001)397:1-2<208:EOLBLO>2.0.ZU;2-8
Abstract
A novel device using a LiF layer both at the anode-organic interface and at the cathode-organic interface was fabricated, combining a weakened hole in jection with enhanced electron injection. The device showed the highest lum inance of 21 000 cd/m(2) m(2) at a fixed bias of 12 V. The device exhibits a steeper I-V characteristic and a higher brightness than that of the devic es of other structures. The steeper I-V characteristic of the device may be useful to an organic electrically pumped laser. (C) 2001 Elsevier Science B.V. All rights reserved.