A novel device using a LiF layer both at the anode-organic interface and at
the cathode-organic interface was fabricated, combining a weakened hole in
jection with enhanced electron injection. The device showed the highest lum
inance of 21 000 cd/m(2) m(2) at a fixed bias of 12 V. The device exhibits
a steeper I-V characteristic and a higher brightness than that of the devic
es of other structures. The steeper I-V characteristic of the device may be
useful to an organic electrically pumped laser. (C) 2001 Elsevier Science
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