Sf. Yoon et al., Effect of process pressure on diamond-like carbon deposited using electroncyclotron resonance chemical vapor deposition, THIN SOL FI, 396(1-2), 2001, pp. 62-68
Diamond-like carbon films were deposited using electron cyclotron resonance
chemical vapor deposition system under various process pressure conditions
. The electron cyclotron resonance plasma was characterized using a Langmui
r probe and optical emission spectroscopy. The film properties were charact
erized using Raman and Fourier transform infrared spectroscopy, hardness an
d optical gap measurements. It was found that the ion density and all peaks
in the optical emission spectrum decreased monotonously following the incr
ease in process pressure. Raman spectra and optical gap measurements sugges
t that the films become more diamond-like and contain a lower sp(2) content
following the increase in process pressure. Infrared spectroscopy measurem
ents showed a significant increase in hydrogen content as the process press
ure increased from 4 to 12 mtorr, and only a slight increase as the pressur
e increased from 12 to 20 mtorr. A deposition mechanism is described which
involved ion bombardment and hydrogen-surface interactions. The deposition
rate is correlated to the ion density and CH3 density. (C) 2001 Elsevier Sc
ience B.V. All rights reserved.