Er-doped oxidised porous silicon waveguides

Authors
Balucani, M Bondarenko, V Lamedica, G Ferrari, A Dolgyi, L Vorozov, N Yakovtseva, V Volchek, S Petrovich, V Kazuchits, N
Citation
M. Balucani et al., Er-doped oxidised porous silicon waveguides, THIN SOL FI, 396(1-2), 2001, pp. 201-203
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
396
Issue
1-2
Year of publication
2001
Pages
201 - 203
Database
ISI
SICI code
0040-6090(20010921)396:1-2<201:EOPSW>2.0.ZU;2-P
Abstract
The present work reports Er-doped channel oxidized porous silicon waveguide s (OPSWG) formed from n(+)-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic trea tment in 0.1 M Er (NO3)(3) aqueous solution. A correlation between Er conce ntration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in t he OPSWG is large enough to attain the amplification effect. (C) 2001 Elsev ier Science B.V. All rights reserved.