DC conductivity of amorphous (GeS3)(100-x)Ga-x thin films

Authors
Petkov, P Ivanova, ZG Vassilev, V
Citation
P. Petkov et al., DC conductivity of amorphous (GeS3)(100-x)Ga-x thin films, THIN SOL FI, 396(1-2), 2001, pp. 209-212
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
396
Issue
1-2
Year of publication
2001
Pages
209 - 212
Database
ISI
SICI code
0040-6090(20010921)396:1-2<209:DCOA(T>2.0.ZU;2-3
Abstract
The results of an experimental test of Christov's theory for injected elect ron current into dielectric or semiconductor materials in amorphous (GeS3)( 100-x)Ga-x (x=0, 4, 8, 12 at.%) thin films are reported. The effective elec tron mass in the conduction band has been calculated. The electron work fun ction at the Al/(Ge-S-Ga) interface and the relative dielectric permittivit y of the layers has been determined. Thermal dependence of direct current ( DC) conductivity has been investigated and activation energy has been deter mined. (C) 2001 Elsevier Science B.V. All rights reserved.