Paper deals with the low cost route of the preparation of SiC/Si3N4 nanocom
posite. It is shown that SiC nanoinclusions distributed within the Si3N4 ma
trix can be produced by carbothermal reduction of fine SiO2 particles added
into a starting mixture. The amount of SiC nanoinclusions can be adjusted
by the appropriate amount of SiO2 + C additives. Almost full density of the
final composite was achieved by hot-pressing at 1750 degreesC using a "spe
cial" heating regime allowing the outgasing of CO as a product of carbother
mal reduction.