Photoelectric conversion property of D-pi-A dye with larger pi conjugationbridge in LB monolayer film

Citation
Fy. Li et al., Photoelectric conversion property of D-pi-A dye with larger pi conjugationbridge in LB monolayer film, ACT CHIM S, 59(10), 2001, pp. 1544-1549
Citations number
14
Categorie Soggetti
Chemistry
Journal title
ACTA CHIMICA SINICA
ISSN journal
05677351 → ACNP
Volume
59
Issue
10
Year of publication
2001
Pages
1544 - 1549
Database
ISI
SICI code
0567-7351(2001)59:10<1544:PCPODD>2.0.ZU;2-D
Abstract
A photoelectroresponsive D - pi - A dye, N - octadecyl - 2 - E (4 - N, N' - dimethylaminophenyl) - 1, 3 - butadienyl]pyridinium iodide (BEP2) has been designed and synthesized by extending the conjugation length, compared to the parent dye N - octadecyl - 2 - ( (4 - N, N' - dimethylaminophenyl) ethe nyl]pyridinium iodide (EP2). She dye molecule was successfully transferred onto an indium - tin oxide (ITO) electrode by Langmuir - Blodgett ( LB) tec hnique. The photoelectric conversion ( PEC) properties of the dye LB monola yer films were studied in a three - electrode cell. The results show that t he PEC properties of BEP2 were depended on the experimental conditions (suc h as redox media, bias voltage and light intensity) and that BEP2 had bette r photoelectric conversion properties than the parent dye EP2 did.