NOVEL III V HETEROSTRUCTURES FABRICATED BY METALORGANIC MOLECULAR-BEAM EPITAXY/

More sophisticated III-V devices and the challenge of integration requ ire material growth over structured surfaces. Of particular interest a re the Ga-In-As-P materials. Due to the surface selective growth in me talorganic molecular beam epitaxy a high degree of perfection in local ly grown structures can be achieved. However, a clear picture of the g rowth mechanism on various crystal planes and structures helps optimiz ing the so-called selective area epitaxy. These mechanisms, in respect to relevant epitaxial parameters (V-III-ratio, rate, crystal orientat ion) with emphasis on lateral butt coupling structures into various cr ystal directions is discussed. Application of in situ grown lateral he terojunctions for e.g. laser-amplifier waveguide integration are prese nted.