Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition

Carbon doping efficiency in GaAs grown by metalorganic chemical vapor depos ition using intrinsic and extrinsic doping sources is studied. Independent of the carbon source, carbon hydrogen complexes are systematically present and depending on the growth conditions, carbon dimers can be present and fo rm complexes with hydrogen as well. Carbon-hydrogen related complexes and d imers reduce the hole concentration decreasing the doping efficiency. Addit ionally, the carbon dimer introduces a deep level, decreases the hole mobil ity and hydrogen bonds stronger to it than to isolated carbon. Depending on the growth conditions it is possible to reach 100% doping efficiency with high hole mobility. (C) 2001 American Institute of Physics.