T. Dimopoulos et al., Interfacial phenomena related to the fabrication of thin Al oxide tunnel barriers and their thermal evolution, APPL PHYS L, 79(19), 2001, pp. 3110-3112
In this work we study phenomena related to the plasma oxidation of thin met
allic Al layers, to be used as insulating barriers in magnetic tunnel junct
ions. We investigate by barrier impedance scanning microscopy how the barri
er's over oxidation influences the local transport characteristics of the o
xide layers and the results are correlated with the magnetotransport proper
ties of patterned microsized as-deposited and annealed junctions. Interesti
ngly, the oxygen reservoir existing at the ferromagnetic metal, degeneratin
g the tunnel device, can be utilized for the improvement of the junction's
magnetotransport properties by means of thermal annealing processing. (C) 2
001 American Institute of Physics.