Oxidation states in scanning-probe-induced Si3N4 to SiOx conversion studied by scanning photoemission microscopy

The biased conductive probe of an atomic force microscope can induce local oxidation in ambience for converting silicon nitride films to silicon oxide s with high reaction rate. Spatially resolved photoemission analysis with s ubmicron resolution has been utilized to study the oxidation states of conv erted silicon oxide patterns in comparison with the surrounding Si3N4 layer . The core level shift of the Si 2p photoelectron peak and the spectral fea tures in the valence band reveal a complete conversion of silicon nitride t o silicon oxide at a bias voltage of 10 V, with no remaining nitrogen left. The major oxide is SiO2. The observed oxidation states of Si4+, Si3+, and Si2+ show a gradient depth distribution indicating excess silicon in the la yer. (C) 2001 American Institute of Physics.